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| KTC3227 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) | |||
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Product specification
TO-92L Plastic-Encapsulate Transistors
KTC3227 TRANSISTOR (NPN)
FEATURES
z Complementary to KTA1274
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
5
0.4
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 1mA,IE=0
IC=5mA,IB=0
IE=1mA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=200mA,IB=20mA
VCE=2V,IC=5mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=10mA
Min Typ Max Unit
80
V
80
V
5
V
0.1
μA
0.1
μA
70
240
40
0.4
V
0.55
0.8
V
10
pF
100
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70-140
Y
120-240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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