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| KTC3203 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
KTC3203 TRANSISTOR (NPN)
TO-92
FEATURES
z Complementary to KTA1271
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
625
150
-55-150
Unit
V
V
V
mA
mW
â
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 0.1mA, IB=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE= 0.1mA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 35V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCE= 25V , IB=0
0.2
μA
Emitter cut-off current
DC current gain
IEBO
VEB= 5V, IC=0
hFE(1)
VCE=1V, IC= 100mA
100
hFE(2)
VCE=1V, IC= 700mA
35
0.1
μA
320
Collector-emitter saturation voltage
VCE(sat)
IC= 500 mA, IB= 20mA
0.5
V
Base-emitter voltage
Transition frequency
Collector Output Capacitance
VBE
VCE= 1V, IC= 10mA
fT
VCE= 5 V, IC= 10mA
Cob
VCB=10V,IE= 0,f=1MHz
0.8
V
120
MHz
13
pF
CLASSIFICATION OF hFE(1)
Rank
Range
O
100-200
Y
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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