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| KTC3197 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
TO-92
KTC3197 TRANSISTOR (NPN)
FEATURES
z High Gain: Gpe=33dB(Typ) (f=45MHZ).
z Good linearity of hFE
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
50
mA
PC
Collector power dissipation
625
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter saturation voltage
Collector output capacitance
Collector-base time constant
Transition frequency
Power gain
Symbol Test conditions
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
ICBO
VCB=30V,IE=0
IEBO
VEB=3V,IC=0
hFE
VCE=12.5V,IC=12.5mA
VCE(sat) IC=15mA,IB=1.5mA
VBE(sat) IC=15mA,IB=1.5mA
Cob
VCB=10V,IE=0,f=1MHZ
Cc.rbb VCB=10V,IE=-1mA, f=30MHZ
fT
VCE=12.5V,IC=12.5mA
Gpe VCE=12.5V,IE=12.5mA, f=45MHZ
Min Typ Max Unit
30
V
25
V
4
V
0.1
μA
0.1
μA
20
200
0.2
V
1.5
V
0.8
2
pF
25
pS
300
MHZ
28
36
dB
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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