KTC3195 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)

Product specification
TO-92S Plastic-Encapsulate Transistors
KTC3195 TRANSISTOR (NPN)
FEATURES
z Small reverse transfer capacitance
z Low noise Figure
TO-92S
1. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
400
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA, I_E=0
40
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
30
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA, I_C=0
4
Collector cut-off current
I_CBO
V_CB=40V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=1mA
40
Transition frequency
f_T
V_CE=6V, I_C=1mA
300
Reverse Transfer capacitance
C_re
V_CB=6V, I_E=0, f=1MHz
Noise figure
Power Gain
NF
V_CE=6V, I_C=1mA,f=100MHZ
G_pe
Typ Max Unit
V
V
V
0.5
μA
0.5
μA
200
550
MHz
0.7
pF
2.5
5
dB
18
dB
CLASSIFICATION OF h_FE
Rank
Range
R
40-80
O
70-140
Y
100-200
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