KTC3194 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)

Product specification
TO-92 Plastic-Encapsulate Transistors
KTC3194 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application
TO – 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbo
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
4
0.02
0.625
200
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_{(BR) CEO}
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
Test conditions
I_C= 0.1mA ,I_E=0
I_C=1mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=40V,I_E=0
V_EB=4V,I_C=0
V_CE=6V, I_C=1mA
I_C=15mA,I_B=1.5mA
V_CE=6V,I_C=1mA
Min Typ Max Unit
40
V
30
V
4
V
0.5 μA
0.5 μA
40
200
0.2 V
550
MHz
CLASSIFICATION OF h_FE
RANK
R
RANGE
40-80
O
70-140
Y
100-200
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1