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| KTC3192 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF, VHF BAND AMPLIFIER) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
KTC3192 TRANSISTOR(NPN)
TO-92
FEATURE
High Power Gain: Gpe=29dB(Typ)(f=10.7MHZ)
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
50
mA
PC
Collector Power Dissipation
625
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1.EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Collector-base time constant
Cc.rbbâ
Power gain
CLASSIFICATION OF hFE
Rank
Range
Gpe
R
40-80
Test conditions
IC= 100μA, IE=0
IC= 1mA , IB=0
IE= 100μA, IC=0
VCB= 35V , IE=0
VEB= 4V , IC=0
VCE=12 V, IC= 2mA
IC= 10mA, IB= 1mA
IC= 10mA, IB= 1mA
VCE= 10 V, IC= 1mA
VCB=10 V,IE=0,f=1MHZ
VCE=10V,IC=1mA,
f=30MHZ
VCC=6V,IC=1mA,
f=10.7MHZ
O
70-140
MIN
35
30
4
40
100
1.4
10
27
TYP MAX UNIT
V
V
V
0.1
μA
1.0
μA
240
0.4
V
1.0
V
400
MHz
3.2
pF
50
pS
33
dB
Y
120-240
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