 English |
|
|
|
|
|
|
|
| KTC1027 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) | |||
| |||
|
Product specification
TO-92L Plastic-Encapsulate Transistors
KTC1027 TRANSISTOR (NPN)
FEATURES
z Complementary to KTA1023
z High Voltage Applications
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
0.8
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
VCB=120V,IE=0
VEB=5V,IC=0
VCE=5V, IC=100mA
IC=500mA,IB=50mA
VCE=5V, IC=500mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=100mA
Min Typ Max Unit
120
V
120
V
5
V
0.1
μA
0.1
μA
80
240
1
V
1
V
30
pF
120
MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
80-160
Y
120-240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese