KTA501U Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SMD Type
■ Features
● Power dissipation: PC=200mW
● Collector Curren: IC=-150mA
TransistIoCrs
Product specification
KTA501U
SOT-353
1.3+0.1
-0.1
0.65
Unit: mm
Q1
Q2
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation(TOTAL)
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5.0
V
IC
-150
mA
PC
200
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
Test conditions
V(BR)CBO Ic= -100μA, IE=0
V(BR)CEO Ic= -1 mA， IB=0
V(BR)EBO IE= -100 μA， IC=0
IcBO VCB= -50 V , IE=0
IEBO VCE= -5.0V , IC=0
hFE VCE= -6V, IC= -2.0mA
VCE(sat) IC=-100mA, IB= -10mA
fT VCE= -10V, IC= -1mA,f=100MHz
Min Typ Max Unit
-50
V
-50
V
-5.0
V
-0.1 μA
-0.1 μA
120
400
-0.3 V
80
MHz
Cob VCB=-10V, IE=0, f=1MHz
7 pF
NF VCE=-6V, IC=-0.1mA, f=1KHz , Rg=10KΩ
1 10 dB
■ hFE Classification
Marking
SY
Rank
Y
Range
120～240
SGR
GR
200～400
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[e-mail]
4008-318-123
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