KTA2015 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Product specification
SOT-323 Plastic-Encapsulate Transistors
KTA2015 TRANSISTOR (PNP)
FEATURES
 Excellent h_FE Linearity
 Complementary to KTC4076
APPLICATIONS
 General Purpose Switching
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-35
VCEO Collector-Emitter Voltage
-30
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-500
PC
Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-35V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-6V, IC=-400mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCB=-6V,IC=-20mA ,
VCB=-6V, IE=0, f=1MHz
Min
Typ
-35
-30
-5
70
25
200
13
CLASSIFICATION OF hFE(1), hFE(2)
RANK
O(2)
RANG hFE(1)
70–140
hFE(2)
MARKING
ZO
Y(4)
120–240
ZY
O
25Min
ZO
Max Unit
V
V
V
-0.1
µA
-0.1
µA
240
-0.25
-1
V
V
MHz
pF
Y
40Min
ZY
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