KTA1666 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

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■ Features
● Collector Power dissipation: PC=500mW
● Collector Current -Continuous: IC=-2A
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Product specification
KTA1666
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
1
Rating
-50
-50
-5
-2
500
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
■ hFE Classification
Marking
Rank
Range
WO
O
70～140
WY
Y
120～240
Symbol
Test conditons
V(BR)CBO IC=-1mA, IE=0
V(BR)CEO IC=-10mA, IB=0
V(BR)EBO IE=-1mA, IC=0
ICBO VCB= -50 V , IE=0
ICEO VCE= -5 V , IB=0
hFE1 VCE=-2V, IC= -0.5A
hFE2 VCE=-2V, IC= -1.5A
VCE(sat) IC=-1A, IB= 50mA
VBE(sat) IC= -1A, IB= 50mA
fT VCE= -2V, IC=-0.5A
Cob VCB=-10V, IE=0, f=1MHz
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Unit
V
V
V
A
mW
℃
℃
Min Typ Max Unit
-50
V
-50
V
-5.0
V
-0.1 μA
-0.1 μA
70
240
40
-0.5 V
-1.2 V
120
MHz
40
pF
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