KTA1663 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

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■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current:IC=-1.5A
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Product specification
KTA1663
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
PC
Collector Power Dissipation
PC*
Junction Temperature
Tj
Storage Temperature Range
Tstg
* mounted on ceramic substrate (250mm² X 0.8t)
Rating ¹
-30
-30
-5
-1.5
-0.3
500
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Output Capacitance
Transition Frequency
Symbol
Test conditons
V(BR)CBO IC=-1mA, IE=0
V(BR)CEO IC=-10mA, IB=0
V(BR)EBO IE=-1mA, IC=0
ICBO VCB=-30V, IE=0
IEBO VEB=-5V, IC=0
hFE
VCE=-2V, IC=-500mA
VCE(sat) IC=-1.5A, IB=-0.03A
VBE VCE=-2V, IC=-500mA
Cob VCB=-10V, IE=0, f=1MHz
fT
VCE=-2V, IC=-500mA
■ hFE Classification
Marking
Rank
Range
HO
O
100～200
HY
Y
160～320
3.00+0.1
-0.1
Unit
V
V
V
A
A
mW
W
℃
℃
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Min Typ Max Unit
-30
V
-30
V
-5.0
V
-100 nA
-100 nA
100
320
-2.0 V
-1.0 V
50 pF
120
MHz
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