KTA1662 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

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■ Features
● Small Flat Package.
● Complementary to KTC4374.
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Product specification
KTA1662
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-80
-80
-5
-0.4
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
VCE (sat)
VBE
fT
Cob
■ hFE Classification
Marking
Rank
Range
FO
O
70～140
FY
Y
120～240
Test conditons
IC=-1mA,IE=0
IC=-10mA,IB=0
IE=-1mA,IC=0
VCB = -80 V, IE = 0
VEB = -5 V, IC = 0
VCE = -2 V, IC = -50mA
VCE = -2 V, IC = -200m A
IC = -200mA, IB = -20mA
VCE=-2V,IC=-5mA
VCE=-10V,IC=-10mA
VCB=-10V,IE=0,f=1MHz
Unit
V
V
V
A
mW
℃
℃
Min Typ Max Unit
-80
-80
V
-5
-0.1 µA
-0.1 µA
70
240
40
-0.4 V
-1.2 V
120
MHz
14
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