KTA1661 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

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Features
High Voltage: VCEO=-120V
High Transition Frequency:fT=120MHz
Small Flat Package
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Product specification
KTA1661
Absolute Maximum Ratings Ta = 25
Parameter
Colletor-Base Voltage
Colletor-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Colletor Power Dissipation
Junction Temperature
Storage Temperature Range
* mounted on ceramic substrate (250mm²X0.8t)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
PC*
Tj
Tstg
Rating
-120
-120
-5
-800
-160
500
1
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Colletor Output Capacitance
Symbol
ICBO
IEBO
V(BR)CEO
B(BR)EBO
hFE
VCE(sat)
VBE
fT
Cob
Testconditons
VCB=-120V,IE=0
VCE=5V,IC=0
IC=-10mA,IB=0
IE=-1mA,IC=0
VCE=-5V,IC=-100mA
IC=-500mA,IB=-50mA
VCE=-5V,IC=-500mA
VCE=-5V,IC=-100mA
VCB=-10V,IE=0,f=1MHz
hFE Classification
Marking
Rank
Type
DO
O
80 160
DY
Y
120 240
Unit
V
V
V
mA
mA
mW
W
Min Typ Max Unit
-100 nA
-100 nA
-120
V
-5.0
V
80
240
-1.0 V
-1.0 V
120
MHz
30 pF
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