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| KTA1275 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR | |||
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Product specification
TO-92L Plastic-Encapsulate Transistors
KTA1275 TRANSISTOR (PNP)
FEATURES
z High Voltage
z Large Continuous Collector Current Capability
z Complementary to KTC3228
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-160
-160
-6
-1
0.9
139
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -1mA,IE=0
-160
V
V(BR)CEO IC=-10mA,IB=0
-160
V
V(BR)EBO IE=-1mA,IC=0
-6
V
ICBO
VCB=-150V,IE=0
-1
μA
IEBO
VEB=-6V,IC=0
-1
μA
hFE
VCE=-5V, IC=-200mA
60
320
VCE(sat) IC=-500mA,IB=-50mA
-1.5
V
VBE
VCE=-5V, IC=-5mA
-0.45
-0.75
V
Cob
VCB=-10V,IE=0, f=1MHz
35
pF
fT
VCE=-5V,IC=-200mA
15
MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
60-120
O
100-200
Y
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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