KTA1273 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

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■ Features
● Collector Power Dissipation: PC=500mW
● Collector current: IC=-2A
● Complementary to KTC3205
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Product specification
KTA1273
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector Power Dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-30
-30
-5
-2
500
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base to emitter voltage
Transition frequency
Output capacitance
* Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
Symbol
Test conditions
V(BR)CBO IC=-1mA, IE=0
V(BR)CEO IC= -10mA, IB=0
V(BR)EBO IE= -1mA, IC=0
ICBO VCB = -30 V, IE = 0 A
IEBO VEB = -5V, IC = 0 A
hFE VCE = -2V, IC = -500mA
VCE(sat) IC = -1.5A, IB = -30 mA
VBE VCE = -2 V, IC = -500mA
fT VCE = -2V, IE = 500 mA
Cob VCE = -10 V, IE = 0, f = 1.0 MHz
■ hFE Classification
Rank
Range
O
100～200
Y
160～320
Unit
V
V
V
A
mW
℃
℃
Min Typ Max Unit
-30
V
-30
V
-5
V
-0.1 μA
-0.1 μA
100
320
-2 V
-1 V
120
MHz
48
pF
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