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| KTA1270 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
KTA1270 TRANSISTOR (PNP)
TO-92
FEATURES
General Purpose Application Switching Application
1.EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-0.5
A
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
Test conditions
Min
IC= -100µA, IE=0
-35
IC= -1mA , IB=0
-30
IE= -100µA, IC=0
-5
VCB= -35 V , IE=0
VEB= -5 V , IC=0
VCE=-1 V, IC= -100mA
70
VCE=-6 V, IC= -400mA
25
IC= -100mA, IB= -10mA
VCE= -1V, IC= -100mA
VCE=-6 V, IC= -20mA
f =100MHz
VCB=-6V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
hFE(1)
hFE(2)
O
70-140
25(min)
Typ Max Unit
V
V
V
-0.1
µA
-0.1
µA
240
-0.25
V
-1
V
200
MHz
13
pF
Y
120-240
40(min)
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