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| KTA1241 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT) | |||
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Product specification
TO-92L Plastic-Encapsulate Transistors
KTA1241 TRANSISTOR (PNP)
FEATURES
z Low Collector Saturation Voltage
z High Power Dissipation
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-20
-8
-5
0.9
139
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-1mA,IE=0
-35
V
V(BR)CEO IC=-10mA,IB=0
-20
V
V(BR)EBO IE=-1mA,IC=0
-8
V
ICBO
VCB=-35V,IE=0
-0.1
μA
IEBO
VEB=-8V,IC=0
-0.1
μA
hFE(1)
VCE=-2V, IC=-0.5A
100
320
hFE(2)
VCE=-2V, IC=-4A
70
VCE(sat) IC=-3A,IB=-75mA
-0.5
V
VBE
VCE=-2V, IC=-4A
-1.5
V
Cob
VCB=-10V,IE=0, f=1MHz
62
pF
fT
VCE=-2V,IC=-0.5A
170
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
100-200
Y
160-320
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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