KTA1023 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

Product specification
TO-92L Plastic-Encapsulate Transistors
KTA1023 TRANSISTOR (PNP)
FEATURES
Complementary to KTC1027
TO-92L
1. EMITTER
2. COLLECTER
MAXIMUM RATINGS (TaB=25℃ unless otherwise noted)
3. BASE
Symbol
VB_CBOB
VB_CEOB
VB_EBOB
I _CB
B
P _CB
B
T _JB
B
TB_stgB
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-120
V
-120
V
-5
V
-0.8
A
0.9
W
150
℃
-55to+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
VB_{(BR)CBO IC=-10μA,IBEB=0}
VB_{(BR)CEO IC=-10mA,IBBB=0}
VB_{(BR)EBO IE=-1mA,IBCB=0}
I_CBO
V_CB=-120V,I_E=0
I_EBO
V_EB=-5V,I_C=0
h_FE
V_CE=-5V,I_C=-100mA
V_CE(sat) _{IC=-500mA,IB=-50mA}
V_BE
I_C=-500mA, V_CE=-5V
f_T
V_CE=-5V, I_CB=-100mA
-120
-120
-5
80
Collector output capacitance
Cob
V_CE=-10V, I_EB=0,f=1MHz
Typ
120
Max Unit
V
V
V
-0.1
μA
-0.1
μA
240
-1.0
V
-1.0
V
MHz
40
pF
CLASSIFICATION OF h_FE
Rank
Range
O
80-160
Y
120-240
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