KST9018 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Transistor

SMD Type
TransistIoCrs
Product specification
KST9018
Features
High current gain bandwidth product.
power dissipation.(PC=200mW)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
15
V
VEBO
5
V
IC
50
mA
PC
200
mW
Tj
150
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cut to off current
Emitter cut to off current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Marking
Marking
J8
Symbol
Testconditons
V(BR)CBO IC= 100 A, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE=100 A, IC=0
ICBO VCB=12V, IE=0
IEBO VEB= 3V, IC=0
hFE VCE=5V, IC= 1mA
VCE(sat) IC=10mA, IB= 1mA
VBE(sat) IC=10mA, IB= 1mA
fT VCE=5V, IC= 5mA,f=400MHz
Min Typ Max Unit
30
V
15
V
5
V
0.05 A
0.1
A
70
190
0.5 V
1.4 V
600
MHz
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