KST8550S Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

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Product specification
KST8550S
Features
Collector current: IC-=0.5A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-25
V
VEBO
-5
V
IC
-0.5
A
PC
0.3
W
Tj
150
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCBO IC=-100 A, IE=0
VCEO IC=-1mA, IB=0
VEBO IE=-100 A, IC=0
ICBO VCB=-40V, IE=0
ICEO VCE=-20V, IB=0
IEBO VEB=-3V, IC=0
VCE=-1V, IC=-50mA
hFE
VCE=-1V, IC=-500mA
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
fT VCE= -6V, IC= -20mA,f=30MHz
hFE Classification
Marking
Rank
hFE
2TY
L
H
120 200
200 350
Min Typ Max Unit
-40
V
-25
V
-5
V
-0.1
A
-0.1
A
-0.1
A
120
350
50
-0.5 V
-1.2 V
150
MHz
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