KRF9952 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SSMMDD TTyyppee
TransistIIoCICICCrs
Product specification
KRF9952
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and Switching Losses
Fully Avalanche Rated
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
@Ta= 25
PD
Power Dissipation
@Ta= 70
Single Pulse Avalanche Energy
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.0A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.3A, di/dt 84A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30
20
3.5
-2.3
2.8
-1.8
16
-10
1.7
-1.3
2
1.3
44
57
2.0
-1.3
0.25
5.0
-5
-55 to + 150
62.5
Unit
V
V
A
A
W
mJ
A
mJ
V/ns
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3