KRF7509 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
TransistIoCICrs
Product specification
KRF7509
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Power Dissipation
@Ta= 70
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 1.7A, di/dt 120A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.2A, di/dt 160A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30
-30
2.7
-2
2.1
-1.6
21
-16
1.25
0.8
10
20
30
5.0
-55 to + 150
100
Unit
V
A
W
m W/
V
V/ns
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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