KRF7504 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

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Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
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Product specification
KRF7504
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -4.5V @ TA = 25
ID
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@TA= 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *3
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t 10sec
*3 ISD -1.2A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150
Rating
-1.7
-1.4
-9.6
1.25
10
12
-5.0
-55 to + 150
100
Unit
A
W
m W/
V
V/ns
/W
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