English
Language : 

KRF7501 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET
SSMMDD TTyyppee
Features
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
TrMaMnOOsSiSsFtFIEoCIErCTs
Product specification
KRF7501
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V,Ta = 25
Continuous Drain Current, VGS @ 10V,TA = 70
Pulsed Drain Current*1
Power Dissipation Ta = 25 *1
Power Dissipation Ta = 70 *1
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp 10 s
Gate-to-Source Voltage
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD 1.7A, di/dt 66A/ s, VDD V(BR)DSS,TJ
*2 Surface mounted on FR-4 board, t 10sec.
Symbol
VDS
ID
ID
IDM
PD
PD
VGSM
VGS
dv/dt
TJ, TSTG
R JA
150
Rating
20
2.4
1.9
19
1.25
0.8
0.01
16
12
5
-55 to + 150
100
Unit
A
A
W
W
W/
V
V
V/ns
/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2