KRF7338 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
Features
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
TransistIoCICrs
Product specification
KRF7338
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current,VGS@10V , Ta = 25
ID
Continuous Drain Current ,VGS@10V , Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25 *3
PD
Power Dissipation
@Ta= 70 *3
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
Junction-to-Drain Lead
R JL
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Pulse width 400 s; duty cycle 2%.
*3 Surface mounted on 1 in square Cu board.
*4 The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.
N-Channel
P-Channel
12
-12
6.3
-3.0
5.2
-2.5
26
-13
2.0
1.3
16
12 *4
8.0
-55 to + 150
62.5
20
Unit
V
A
W
mV/
V
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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