KRF7325 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Product specification
KRF7325
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@Ta= 25
PD
Power Dissipation *2
@Ta = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Drain Lead
R JL
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 When mounted on 1 inch square copper board.
Rating
-12
-7.8
-6.2
-39
2.0
1.3
16
8.0
-55 to + 150
20
62.5
Unit
V
A
W
W
W/
V
/W
/W
http://www.twtysemi.com
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4008-318-123
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