KRF7319 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
TransistIoCICrs
Product specification
KRF7319
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current *5 Ta = 25
ID
Continuous Drain Current *5 Ta = 70
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
@Ta= 25 *4
PD
Power Dissipation
@Ta= 70 *4
Single Pulse Avalanche Energy
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *4
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
30
-30
6.5
-4.9
5.2
-3.9
30
-30
2.5
-2.5
2.0
1.3
82
140
4.0
-2.8
0.20
5.0
-5
20
-55 to + 150
62.5
*2 N-Channel ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.8A, di/dt 150A/ s, VDD V(BR)DSS, TJ 150
*3 N-Channel Starting TJ = 25 , L = 10mH RG = 25 , IAS = 4.0A.
P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.8A.
*4 Surface mounted on FR-4 board, t 10sec.
Unit
V
A
W
mJ
A
mJ
V/ ns
V
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3