KRF7317 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
TransistIoCICrs
Product specification
KRF7317
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Continuous Drain Current Ta = 25
Continuous Drain Current Ta = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
@Ta= 25 *2
Power Dissipation
@Ta= 70 *2
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt *1
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
Symbol
VDS
ID
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
VGS
TJ, TSTG
R JA
N-Channel
P-Channel
20
-20
6.6
-5.3
5.3
-4.3
26
-21
2.5
-2.5
2.0
1.3
100
150
4.1
-2.9
0.20
5.0
-5
12
-55 to + 150
62.5
*1 N-Channel ISD 4.1A, di/dt 92A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.9A, di/dt -77A/ s, VDD V(BR)DSS, TJ 150
*2 Surface mounted on FR-4 board, t 10sec.
Unit
V
A
W
mJ
A
mJ
V/ ns
V
/W
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