KQS4900 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N & P-Channel, Logic Level MOSFET

SMD Type
Features
N-Channel
1.3 A, 60 V RDS(ON) = 0.55 @ VGS = 10 V
RDS(ON) = 0.65 @ VGS =5V
P-Channel
-0.3 A, -300V RDS(ON) = 15.5 @ VGS =- 10V
RDS(ON) = 16 @ VGS =-5V
Low gate charge ( typical N-Channel 1.6 nC)
( typical P-Channel 3.6 nC)
Fast switching
Improved dv/dt capability
TransistIoCICrs
Product specification
KQS4900
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous Ta = 25
Ta = 70
Drain Current Pulsed
*1
Peak Diode Recovery dv/dt
Power Dissipation for Single Operation Ta = 25
Ta = 70
Operating and Storage Temperature
Thermal Resistance Junction to Ambient
Symbol
VDSS
VGS
ID
IDM
dv/dt
PD
TJ, TSTG
R JA
N-Channel
P- Channel
60
-300
20
1.3
-0.3
0.82
-0.19
5.2
-1.2
7
4.5
2
1.3
-55 to 150
62.5
*1Repetitive Rating : Pulse width limited by maximum junction temperature
Unit
V
V
A
A
V/ns
W
/W
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4008-318-123
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