KQB5N20 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 200V N-Channel MOSFET

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Features
4.5A, 200 V. RDS(ON) = 1.2 @ VGS = 10 V
Low gate charge (typical 6.0nC)
Low Crss(typical 6.0pF)
Fast switching
100% avalanche tested
lmproved dv/dt capability
TransistIoICCrs
Product specification
KQB5N20
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
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Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Drain Current Continuous (TC=25 )
Drain Current Continuous (TC=100 )
Drain Current Pulsed *1
Gate-Source Voltage
Single Pulsed Avalanche Energy*2
Avalanche Current *1
Repetitive Avalanche Energy *1
Peak Diode Recovery dv/dt *3
Power dissipation @ TA=25
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient *4
Thermal Resistance Junction to Ambient
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
PD
TJ, TSTG
TL
R JC
R JA
R JA
Rating
200
4.5
2.8
18
30
60
4.5
5.2
5.5
3.13
52
0.42
-55 to150
300
2.4
40
62.5
*1 Repetitive Rating:Pulse width limited by maximum junction temperature
*2 l=4.5mH,IAS=4.5A,VDD=50V,RG=25 ,Startion TJ=25
*3 ISD 4.5A,di/dt 300A/ S,VDD BVDSS,Startiong TJ=25
*4 When mounted on the minimum pad size recommended (PCB Mount)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
/W
/W
/W
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