KPCF8402 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon P, N Channel MOS Type Transistor

SMD Type
TransistIoCICrs
Product specification
KPCF8402
Features
Low drain-source ON resistance
: P Channel RDS (ON) = 60 m (typ.)
N Channel RDS (ON) = 38 m (typ.)
High forward transfer admittance
: P Channel |Yfs| = 5.9 S (typ.)
N Channel |Yfs| = 6.8 S (typ.)
Low leakage current
: P Channel IDSS = -10 A (VDS = -30 V)
N Channel IDSS = 10 A (VDS = 30 V)
Enhancement-mode
: P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Drain-gate voltage (RGS = 20 k )
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Symbol
VDSS
VDGR
VGSS
ID
IDP
P-Channel
-30
-30
20
-3.2
-12.8
N-Channel
30
30
20
4
16
Single-device operation
Drain power dissipation (t = ^{(Note 3a)}
5 s)
Single-device value at
dual operation(Note 3b)
PD (1)
PD (2)
1.35
1.12
1.35
1.12
Single-device operation
Drain power dissipation (t = ^{(Note 3a)}
5 s) (Note 2b)
Single-device value at
dual operation(Note 3b)
PD (1)
PD (2)
0.53
0.33
0.53
0.33
Single pulse avalanche energy(Note 4)
EAS
Avalanche current
IAR
Repetitive avalanche energy Single-device value at
dual operation (Note 2a, 3b, 5)
EAR
0.67
2.6
-1.6
2
0.11
Channel temperature
Storage temperature range
Single-device operation
Thermal resistance,channel _{(Note 3a)}
to ambient (t = 5 s) (Note
2a)
Single-device value at
dual operation (Note 3b)
Single-device operation
Thermal resistance,channel (Note 3a)
to ambient (t = 5 s) (Note
2b)
Single-device value at
dual operation (Note 3b)
Tch
Tstg
Rth (ch-a) (1)
Rth (ch-a) (2)
Rth (ch-a) (1)
Rth (ch-a) (2)
150
-55 to 150
92.6
111.6
235.8
378.8
Unit
V
V
V
A
A
W
mJ
A
mJ
/W
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