KPA1890 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
Features
Can be driven by a 4.0-V power source
Low on-state resistance
N-channel RDS(on)1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)3 = 47 m MAX. (VGS = 4.0 V, ID = 3 A)
P-channel RDS(on)1 = 37 m MAX. (VGS = -10 V, ID = -2.5 A)
RDS(on)2 = 56 m MAX. (VGS = -4.5 V, ID = -2.5 A)
RDS(on)3 = 64 m MAX. (VGS = -4.0 V, ID = -2.5 A)
Built-in G-S protection diode against ESD
TransistIoCICrs
Product specification
KPA1890
TSSOP-8
Unit: mm
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation *2
Channel Temperature
Storage Temperature
Symbol
N-Channel
P- Channel
Unit
VDSS
30
-30
V
VGSS
20
20
V
ID(DC)
6.0
5.0
A
ID(pulse)
24
20
A
PT
2
W
Tch
150
Tstg
-55 to +150
*1 PW 10 s, Duty Cycle 1%
*2 Mounted on ceramic substrate of 5000 mm² X 1.1 mm
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