KPA1793 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
Features
Low on-state resistance
N-channel RDS(on)1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A)
RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A)
P-channel RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A)
RDS(on)2 = 120 m MAX. (VGS = -4.0 V, ID = -1.5 A)
RDS(on)3 = 190 m MAX. (VGS = -2.5 V, ID = -1.0 A)
Low input capacitance
N-channel Ciss = 160 pF TYP.
P-channel Ciss = 370 pF TYP.
Built-in gate protection diode
Small and surface mount package
TransistIoCICrs
Product specification
KPA1793
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 units) *2
Channel Temperature
Storage Temperature
Symbol
N-Channel
P- Channel
Unit
VDSS
20
-20
V
VGSS
12
12
V
ID(DC)
3
3
A
ID(pulse)
12
12
A
PT
1.7
W
PT
2
W
Tch
150
Tstg
-55 to +150
*1 PW 10 s, Duty Cycle 1%
*2 Mounted on ceramic substrate of 5500 mm² X 2.2 mm
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