KPA1790 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
Features
Dual chip type
Low on-state resistance
N-channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 1.19 TYP. (VGS = 4 V, ID = 0.5 A)
P-channel RDS(on)1 = 0.45 TYP. (VGS = -10 V, ID = -0.35 A)
RDS(on)2 = 0.74 TYP. (VGS = -4 V, ID = -0.35 A)
Low input capacitance
N-channel Ciss = 180 pF TYP.
P-channel Ciss = 230 pF TYP.
Built-in G-S protection diode
Small and surface mount package
TransistIoCICrs
Product specification
KPA1790
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1 unit) *2
Total Power Dissipation (2 units) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
N-Channel
P- Channel
Unit
VDSS
60
-60
V
VGSS
20
20
V
ID(DC)
1.0
0.7
A
ID(pulse)
4.0
2.8
A
PT
1.7
W
PT
2
W
Tch
150
Tstg
-55 to +150
IAS
0.5
-0.35
A
EAS
0.02
0.01
mJ
*1. PW 10 s, Duty Cycle 1%
*2. Mounted on ceramic substrate of 2000 mm² X 2.25 mm
*3. Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0 V
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