KPA1764 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
Features
Dual chip type
Low on-state resistance
RDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A)
RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A)
Low input capacitance
Ciss = 1300 pF TYP.
Built-in G-S protection diode
Small and surface mount package
ICIC
Product specification
KPA1764
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
60
V
Gate to Source Voltage (VDS = 0)
VGSS
20
V
Drain Current (DC)
ID(DC)
7
A
Drain Current (Pulse) *1
ID(pulse)
28
A
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation (2 unit) *2
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
Single Avalanche Current *3
IAS
7
A
Single Avalanche Energy *3
EAS
98
mJ
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 2000 mm² X1.1 mm
*3 Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0 V
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