KPA1758 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SSMMDD TTyyppee
Features
Dual MOS FET chips in small package
2.5 V gate drive type low on-state resistance
RDS(on)1 = 30 m (MAX.) (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 40 m (MAX.) (VGS = 2.5 V, ID = 3.0 A)
Low Ciss : Ciss = 1100 pF (TYP.)
Built-in G-S protection diode
Small and surface mount package
MOSFIIECCICT
Product specification
KPA1758
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
12.0
V
Drain Current (DC)
ID(DC)
6.0
A
Drain Current (Pulse) *1
ID(pulse)
24
A
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation (2 unit) *2
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 2000 mm² X1.1 mm
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2