KPA1750 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
Features
Dual MOSFET chips in small package
4V Gate Drive Type and Low On-Resistance
RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A)
RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A)
Low Ciss : Ciss = 540 pF TYP.
Built-in G-S protection diode
Small and surface mount package
ICIC
Product specification
KPA1750
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC) Ta = 25
ID(DC)
3.5
A
Drain Current (Pulse) *1
ID(pulse)
14
A
Total Power DissipationTa = 25 *2
Total Power DissipationTa = 25 *2
1.7
W
PT
2.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to + 150
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 1200mm² X1.0 mm
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