KO8822 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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MOSFIIECCICT
Product specification
KO8822
■ Features
● VDS (V) = 20V
● ID = 7A (VGS=10V)
● RDS(ON) ＜ 21mΩ (VGS = 10V)
● RDS(ON) ＜ 24mΩ (VGS = 4.5V)
● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
● RDS(ON) ＜ 50mΩ (VGS = 1.8V)
TSSOP-8
Unit: mm
D1/D2 1
S1 2
S1 3
G1 4
8 D1/D2
7 S2
6 S2
5 G2
D1
D2
G1
G2
S1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±12
Continuous Drain Current *1
TA=25℃
7
ID
TA=70℃
5.7
Pulsed Drain Current *2
IDM
30
Power Dissipation *1 TA=25℃
TA=70℃
1.5
PD
0.96
Maximum Junction-to-Ambient *1 t ≤ 10s
83
RθJA
Maximum Junction-to-Ambient *1 Steady-State
130
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R θJA is measured with the device mounted on 1in ² FR-4 board with 2oz.
Copper, in a still air environment with TA =25℃
*2 Repetitive rating, pulse width limited by junction temperature.
S2
Unit
V
V
A
W
℃/W
℃
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