KMUN2231T1 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Bias Resistor Transistor

SMD Type
Transistors
Product specification
KMUN2231T1
■ Features
● Simplifies Circuit Design
● Reduces Board Space
● Reduces Component Count
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
PIN 1
R₁
BASE
(INPUT)
R₂
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter Voltage
Collector Current -Continuous
Collector Power dissipation
Thermal Resistance Junction-to-Ambient
Junction temperature
Storage temperature
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
Symbol
VCBO
VCEO
IC
PC
RθJA
Tj
Tstg
Rating
50
50
0.1
0.23
540
150
-55 to +150
Unit
V
V
A
W
℃/W
℃
℃
Symbol
Testconditons
Min Typ Max Unit
V(BR)CBO
Ic= 10 μA，IE=0
50
V
V(BR)CEO
Ic= 2mA， IB=0
50
V
ICBO
VCB= 50 V , IE=0
0.1 μA
ICEO
VCE= 50 V , IB=0
0.5 μA
IEBO
VEB= 6V , IC=0
2.3 mA
hFE
VCE=10V, IC= 5.0mA
8 15
VCE(sat)
IC = 10 mA, IB = 5 mA
0.25 V
VOL VCC = 5.0 V, VB = 2.5 V, RL = 1.0kΩ
VOH VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ 4.9
V
R1
R1/R2
1.5 2.2 2.9 kΩ
0.8 1.0 1.2
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