KMBT5551 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

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Product specification
KMBT5551(MMBT5551)
Features
High Voltage Transistors
Pb-Free Packages are Available
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
Rating
Unit
VCBO
180
V
VCEO
160
V
VEBO
6
V
IC
0.6
A
Pc
300
mW
TJ, Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-base breakdown voltage
VCBO IC = 100 ìA, IE = 0
Collector-emitter breakdown voltage *
VCEO IC = 1.0 mA, IB = 0
Emitter-base breakdown voltage
VEBO IE = 10 ìA, IC = 0
Collector cutoff current
ICBO VCB = 120 V, IE = 0
Emitter cutoff current
IEBO VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 5 V
DC current gain *
hFE IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage *
VCE(sat) IC = 50 mA, IB = 5.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = 50 mA, IB = 5.0 mA
Transiston frequency
fT VCE=10V,IC=10mA,f=100MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
Marking
Marking
G1
Min Typ Max Unit
180
V
160
V
6
V
50 nA
50 nA
80
100
300
50
0.5 V
1.0 V
100
MHz
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