KMBT3904 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Product specification
KMBT3904(MMBT3904)
Features
Epitaxial planar die construction
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta = 25
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
Marking
Marking
1AM
Symbol
Rating
Unit
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
0.2
A
PC
0.2
W
TJ
150
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
Symbol
Testconditons
VCBO Ic= 100 ìA IE=0
VCEO Ic= 1 mA IB=0
VEBO IE= 10 A IC=0
IcBO VCB= 60 V , IE=0
IcEO VCE= 30 V , VBE(off)=3V
IEBO VEB= 5V , IC=0
VCE= 1V, IC= 10mA
hFE
VCE= 1V, IC= 50mA
VCE(sat) IC=50 mA, IB= 5mA
VBE(sat) IC= 50 mA, IB= 5mA
td VCC=3.0V,VBE=-0.5V
tr IC=10mA,IB1=-IB2=1.0mA
ts VCC=3.0V,IC=10mA
tf IB1=-IB2=1.0mA
fT VCE= 20V, IC= 10mA,f=100MHz
Min Typ Max Unit
60
V
40
V
6
V
0.1
A
50 nA
0.1
A
100
400
60
0.3 V
0.95 V
35
ns
35
200
ns
50
250
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2