KI6968BEDQ Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection

SMD Type
Features
VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A
VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A
MOSFIECICT
Product specification
KI6968BEDQ(SI6968BEDQ)
TSSOP-8
Unit: mm
N-Channel
* Typical value by design
N-Channel
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient*
t 10 sec
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
* Surface Mounted on FR4 Board, t 10 sec.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Symbol
RthJA
RthJF
10 secs Steady State
20
12
6.5
5.2
5.5
3.5
30
1.5
1.0
1.5
1.0
0.96
0.64
-55 to 150
Typ
Max
72
83
100
120
55
70
Unit
V
A
W
Unit
/W
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