KI4923DY Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual P-Channel 30-V (D-S) MOSFET

SMD Type
Features
TrenchFET Power MOSFETS
Advanced High Cell Density Process
ICIC
Product specification
KI4923DY
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA = 25
Continuous Drain Current (TJ = 150 ) *
TA = 70
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady-State
Steady-State
* Surface Mounted on 1" X 1' FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Symbol
RthJA
RthJF
10 secs Steady State
-30
20
-8.3
-6.2
-6.6
-5
-30
-1.7
-0.9
2
1.1
1.3
0.7
-55 to 150
Typ
Max
45
62.5
85
110
26
35
Unit
V
A
W
Unit
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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