KI4464DY Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel 200-V (D-S) MOSFET

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Features
PWM Optimized for (Lowest Q^g and Low R^G)
TrenchFET Power MOSFET
MOSFIECICT
Product specification
KI4464DY
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ) TA = 25
TA = 70
Pulsed Drain Current
Single Avalanch Current
L = 0.1 mH
Single Avalanch Energy
L = 0.1 mH
Continuous Source Current ( Diode Conduction)*
Maximum Power Dissipation *
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
10 secs
Steady State
Unit
200
V
20
2.2
1.7
1.7
1.3
A
8
3
0.45
mJ
2.1
1.2
A
2.5
1.5
W
1.6
0.9
-55 to 150
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