KI2328DS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel 100-V (D-S) MOSFET

SMD Type
TransistIoCrs
Product specification
KI2328DS
Features
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TJ=150 ) *1 TA=25
------------------------------------------------TA=70
Pulsed Drain Current *2
Single-Pluse Avalanche Current *2 L = 1 0 mH
Single-Pulse Avalanche Energy L = 1 0 mH
Continuous Source Current (Diode Conduction)*1
Symbol
VDS
VGS
ID
IDM
IAS
EAS
IS
Power Dissipation *1
TA=25
PD
-------------------------------------------------TA=70
Jumction Temperature
Tj
Storage Temperature
Tstg
*1 Surface Mounted on 1" X 1" FR4 Board.
*2 Pulse width limited by maximum junction temperature.
5 sec
Steady State
Unit
100
V
20
V
1.5
1.15
1.2
0.92
A
6
A
6
mJ
1.8
0.6
1.25
0.75
0.8
0.47
W
150
-55 to +150
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient * t 5 sec
Maximum Junction-to-Ambient
Steady State
Maximum Junction-to-Foot (Drain) Steady State
Symbol
RthJA
RthJF
Typical
80
130
45
Maximum
100
170
55
Unit
/W
* Surface Mounted on 1" X 1" FR4 Board.
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