KI2314EDS Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel 20-V (D-S) MOSFET

SMD Type
Features
TrenchFET Power MOSFET
ESD Protected: 3000 V
TransistIoCrs
Product specification
KI2314EDS
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )*1 TA = 25
TA = 70
Pulsed Drain Current
Avalanche Current*2
L = 0.1 mH
Single Avalanche Energy
L = 0.1 mH
Continuous Source Current (Diode Conduction)*1
Power Dissipation *1
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*1 Surface Mounted on 1"X 1" FR4 Board.
*2 Pulse width limited by maximum junction temperature.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
5secs
Steady State
Unit
20
V
12
4.9
3.77
3.9
3
15
A
15
11.25
1
1.25
0.75
W
0.8
0.48
-55 to 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
/W
* Surface Mounted on 1"X 1" FR4 Board.
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