KI1905DL Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual P-Channel 1.8-V (G-S) MOSFET

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Features
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Product specification
KI1905DL
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 )* TA=25
--
TA=85
Pulsed drain current
Continuous source current (diode conduction) *
Power dissipation *
--
TA=25
TA=85
Operating junction and storage temperature range
* Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj,Tstg
5 secs
Steady State
Unit
-8
V
8
V
0.60
0.57
A
0.43
0.41
1.0
A
-0.25
-0.23
A
0.30
0.16
0.27
0.14
W
-55 to +150
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
/W
* Surface Mounted on 1" X 1" FR4 Board.
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