KI1557DH Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N- and P-Channel 1.8-V (G-S) MOSFET

SMD Type
Features
TrenchFET Power MOSFETs
Fast Switching to Minimize Gate and
Switching Losses
TransistIoCrs
Product specification
KI1557DH
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
P-Channel
Symbol
Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage
VDS
12
-12
V
Gate-Source Voltage
VGS
8
V
Continuous Drain Current (TJ = 150 )* TA = 25
1.3
1.2
-0.86
-0.77
A
ID
TA = 85
0.9
0.8
-0.62
-0.55
A
Pulsed Drain Current
IDM
3
-2
A
Continuous Source Current (Diode Conduction)*
IS
0.5
0.39
-0.5
-0.39
A
Maximum Power Dissipation*
TA = 25
TA = 85
0.6
0.47
0.6
0.47
W
PD
0.3
0.25
0.3
0.25
W
Operating Junction and Storage Temperature Range TJ, Tstg
-55 to 150
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings TA = 25
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
170
220
105
Maximum
210
265
125
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
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