KHC21025 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary enhancement mode MOS transistors

SMD Type
Features
High-speed switching
No secondary breakdown
Very low on-resistance.
TransistIoCrs
Product specification
KHC21025
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel P-Channel
Unit
Drain to Source Voltage
VDSS
30
-30
V
Gate to Source Voltage
VGS
20
20
V
Drain Current
Ts 80
ID
3.5
-2.3
A
peak drain current *1
IDM
14
-10
A
total power dissipation Ts = 80 ; *2
2
Tamb = 25 ; * 3
2
Ptot
W
Tamb = 25 ; * 4
1
Tamb = 25 ; *5
1.3
storage temperature
Tstg
-65 to 150
operating junction temperature
Tj
150
source current (DC) Ts 80
IS
1.5
-1.25
A
peak pulsed source current *1
ISM
6
-5
A
thermal resistance from junction to soldering point
Rth j-s
35
K/W
*1 Pulse width and duty cycle limited by maximum junction temperature.
*2 Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
*3 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 27.5 K/W.
*4 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 90 K/W.
*5 Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit
board with an Rth a-tp (ambient to tie-point) of 90 K/W.
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