KDW2521C Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary PowerTrench MOSFET

SMD Type
Features
N-Channel
5.5 A, 20 V RDS(ON) = 21m @ VGS = 4.5 V
RDS(ON) = 35m @ VGS =2.5V
P-Channel
-3.8 A, 20 V RDS(ON) = 43 m @ VGS =- 4.5 V
RDS(ON) = 70 m @ VGS =-2.5V
High performance trench technology for extremely low RDS(ON)
TransistIoCICrs
Product specification
KDW2521C
TSSOP-8
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
(Note 1b)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
N-Channel
P- Channel
20
-20
12
12
5.5
-3.8
30
-30
1
0.6
-55 to 150
125
208
Unit
V
V
A
A
W
/W
/W
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